DistyParts Icon
60R360P The MAGNACHIP SEMICONDUCTOR 60R360P is an N-channel MOSFET designed for high efficiency applications. It features a 600V drain-source voltage and low on-resistance.
Mfr Part #:

60R360P

Available from 1 distributors
Mfr Name: Magnachip Semiconductor
Magnachip Semiconductor
The MAGNACHIP SEMICONDUCTOR 60R360P is an N-channel MOSFET designed for high efficiency applications. It features a 600V drain-source voltage and low on-resistance.
✓ Total Stock: 400 pcs
$ Price Range: $0.10

60R360P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
400 pcs
On Request
400 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

60R360P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Power Dissipation
Storage Temperature
Tape & Reel
View Similar Products (0)

60R360P Description

Short technical summary and product information.

The MAGNACHIP SEMICONDUCTOR 60R360P is a power MOSFET utilizing advanced super junction technology. This technology enables very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling.

 

Key electrical characteristics include a 600V drain-source breakdown voltage, a maximum on-resistance of 0.36 Ohms at 10V gate-source voltage and 3.8A drain current, and a typical gate charge of 28nC. It offers a continuous drain current of 11A at 25°C case temperature.

 

This MOSFET is designed for applications such as PFC power supply stages and general switching applications. It is packaged in a TO-220F case and is suitable for various adapter designs.

 

The device is 100% avalanche tested and features a green package with Pb-free plating and halogen-free materials.

60R360P Quick Information

Product Type: N-channel MOSFET
Canonical Name: MAGNACHIP SEMICONDUCTOR MMF(U)60R360P N-channel MOSFET
Subcategory: N-channel

60R360P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

60R360P Estimated Pricing

Qty Low High
1+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

60R360P Features

  • 600V drain-source breakdown voltage.
  • 0.36 Ohm maximum on-resistance.
  • 11A continuous drain current.
  • Low gate charge for high efficiency.
  • Suitable for PFC power supply stages.

60R360P Applications

  • Used in high-voltage power filtering
  • Suitable for energy storage circuits
  • Ideal for high-frequency applications
  • Applied in power supply circuits

60R360P FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the 60R360P?

The maximum drain-source voltage (Vds) is 600V.

What is the typical gate threshold voltage?

The typical gate threshold voltage (Vgs(th)) is 3V.

What is the maximum on-resistance?

The maximum drain-source on-state resistance (Rds(on)) is 0.36 Ohms.

What is the typical total gate charge?

The typical total gate charge (Qg) is 28nC.

What is the package type for this MOSFET?

This MOSFET is supplied in a TO-220F package.

Home
Account

Categories