BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD250C from Multicom is a PNP Silicon Power Transistor designed for demanding applications. It is rated for 125 W of continuous device dissipation at 25°C case temperature and can handle a continuous collector current of 25 A, with a peak collector current of 40 A.
Key electrical characteristics include a collector-emitter voltage (V_CER) of -115 V (with RBE = 100 Ω) and a collector-emitter voltage (V_CEO) of -100 V (at IC = -30 mA). The emitter-base voltage (V_EBO) is rated at -5 V.
This transistor is housed in a TO-247 package, suitable for surface mounting. It operates within a junction temperature range of -65°C to +150°C, making it suitable for various thermal environments. The BD250C is designed for complementary use with the BD249 series, offering flexibility in circuit design.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the BD250C is -25 A.
The collector-emitter voltage (V_CEO) for the BD250C is -100 V when measured at IC = -30 mA.
The maximum continuous device dissipation (P_tot) for the BD250C at 25°C case temperature is 125 W.
The operating junction temperature range (Tj) for the BD250C is -65°C to +150°C.
The BD250C is supplied in a TO-247 package.