| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
53,980 pcs
|
53980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The 55GN01MA-TL-E is an NPN silicon RF transistor designed for high-frequency amplification and switching applications. It features a maximum collector-to-emitter voltage of 10V, collector-to-base voltage of 20V, and emitter-to-base voltage of 3V. The device can handle a continuous collector current of 70mA and dissipates up to 400mW when mounted on a ceramic substrate (250mm² × 0.8mm).
Key electrical characteristics include a DC current gain (hFE) of 100 minimum and 180 typical at VCE=5V, IC=10mA. The gain-bandwidth product (fT) is 3.0GHz minimum and 4.5GHz typical at VCE=3V, IC=5mA, and 5.5GHz typical at VCE=5V, IC=20mA. The forward transfer gain (|S21e|²) is 7dB minimum and 10dB typical at 1GHz, while the noise figure is typically 1.9dB with a maximum of 2.8dB at 1GHz. Output capacitance (Cob) is 1.3pF maximum, and reverse transfer capacitance (Cre) is 0.6pF typical.
The transistor is packaged in a compact SC-70/SOT-323 package (also designated as 3-MCP) and is surface-mountable. It is supplied in tape and reel with 3,000 pieces per reel. The junction temperature can reach up to 150°C, with a storage temperature range of -55°C to +150°C. This device is suitable for RF low-noise amplifiers, oscillators, and buffer stages in wireless communication and other high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 12,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 10V, collector-to-base voltage is 20V, and emitter-to-base voltage is 3V.
The device is available in SC-70/SOT-323 surface-mount package, also designated as 3-MCP.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The device is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The DC current gain (hFE) is minimum 100 and typical 180 at VCE=5V, IC=10mA.
The gain-bandwidth product (fT) is 3.0GHz minimum and 4.5GHz typical at VCE=3V, IC=5mA, and 5.5GHz typical at VCE=5V, IC=20mA.
The noise figure is typically 1.9dB and maximum 2.8dB at VCE=3V, IC=5mA, f=1GHz, ZO=50Ω.