BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The 50C02MH-TL-E is a single NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for surface mount applications and comes in a 3-SMD, Flat Lead package.
Key electrical specifications include a collector-emitter breakdown voltage of 50V, a maximum collector current of 500mA, and a transition frequency of 500MHz. The device offers a minimum DC current gain (hFE) of 300 at 10mA and 2V, with a Vce saturation of 100mV at 10mA and 100mA. The maximum power dissipation is 600mW, and it can operate at temperatures up to 150°C.
This transistor is suitable for various general-purpose amplification and switching applications where its specific voltage, current, and frequency characteristics are beneficial. The surface mount package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the 50C02MH-TL-E is 150°C.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current is 500mA.
The minimum DC Current Gain (hFE) is 300, measured at 10mA, 2V.
The nominal transition frequency is 500MHz.
The maximum power dissipation is 600mW.
The 50C02MH-TL-E comes in a 3-SMD, Flat Lead package.