Mfr Part #:

4N60G

Mfr Name: N-A

The Nell Power Semiconductor 4N60G is a MOSFET with a 650V Drain-Source Voltage and 4A current conduction capability. It is designed for general-purpose switching applications.

✓ Total Stock: 2,500 pcs

$ Price Range: $0.99

4N60G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
ACK ELEKTRONIK ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

4N60G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	N-A

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4N60G Description

Short technical summary and product information.

The 4N60G is a three-terminal silicon MOSFET from Nell Power Semiconductor. It features a current conduction capability of 4A, fast switching speed, and low on-state resistance. The device has a breakdown voltage rating of 600V and a Drain-Source Voltage of 650V.

This MOSFET is designed for use in applications such as switched-mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general-purpose switching applications. Its specifications make it suitable for various power electronics designs requiring reliable switching performance.

Further details regarding package type, mounting, and specific electrical characteristics would typically be found in the datasheet. However, its core functionality is geared towards efficient power management and switching operations.

4N60G Quick Information

Product Type: MOSFET

Canonical Name: 4N60G MOSFET

Subcategory: Power MOSFET

4N60G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

4N60G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

4N60G Features

650V Drain-Source Voltage rating.
4A current conduction capability.
600V breakdown voltage rating.
Fast switching speed.
Low on-state resistance.

4N60G Applications

Switched mode power supplies.
DC to DC converters.
PWM motor controls.
Bridge circuits.
General purpose switching.

4N60G FAQs

4 frequently asked questions generated from this part’s specifications.

What is the Drain-Source Voltage of the 4N60G?

The Drain-Source Voltage is 650V.

What is the current conduction capability of the 4N60G?

The current conduction capability is 4A.

What is the breakdown voltage rating for the 4N60G?

The breakdown voltage rating is 600V.

What are the typical applications for the 4N60G MOSFET?

The 4N60G is designed for applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications.