| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Supplier Device Package | |
| Tape & Reel | |
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The ON Semiconductor 4N37M is a general-purpose optocoupler designed for reliable signal isolation. It consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor within a standard 6-pin dual-in-line package.
This optocoupler provides a high isolation voltage of 4170Vrms, making it suitable for applications requiring separation between circuits. It operates with a forward current of 60 mA and offers a minimum Current Transfer Ratio (CTR) of 100% at 10 mA.
The 4N37M is designed for through-hole mounting and comes in a 6-DIP package. It operates within a temperature range of -40°C to 100°C. Key electrical characteristics include a maximum collector emitter saturation voltage of 300mV and a maximum collector emitter voltage of 30V.
Applications for this optocoupler include power supply regulators, digital logic inputs, and microprocessor inputs where electrical isolation is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 4N37M optocoupler offers an isolation voltage of 4170Vrms.
The minimum current transfer ratio for the 4N37M is 100% at a forward current of 10 mA.
The 4N37M optocoupler is supplied in a 6-DIP package.
The 4N37M optocoupler operates within a temperature range of -40°C to 100°C.
The 4N37M optocoupler features a transistor output with a base.