| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,612 pcs
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4612 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 4N37 is an optocoupler integrated circuit that uses an infrared emitting diode to drive a phototransistor. It is designed for applications requiring electrical isolation between circuits.
Key electrical specifications include a high input-output isolation voltage of 3,550Vrms for the 4N35 series and 1,500Vrms for the 4N37 series. The current transfer ratio (CTR) is a minimum of 100% at IF = 10mA and VCE = 10V at 25°C. Response time is typically 3 μs. The device operates with a forward current of up to 400mA (diode side) and has a power dissipation of 700mW (phototransistor side).
Environmental and safety features include a pollution degree of 2, a minimum clearance distance of 7.0mm, and a minimum creepage distance of 7.0mm between input and output. The isolation thickness is 0.4mm minimum. Safety limit values are provided for current, power, and temperature.
The 4N37 is available in a dual-in-line package (DIP-6) and is suitable for through-hole mounting. It is compliant with RoHS directive 2002/95/EC.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The isolation voltage (Viso) is 3,550Vrms for the 4N35 series and 1,500Vrms for the 4N37 series.
The minimum CTR is 100% at IF = 10mA and VCE = 10V at 25°C.
The typical response time is 3 μs at Vcc = 10V, IC = 2mA, RL = 100 Ω.
The 4N37 is available in a dual-in-line package (DIP-6) suitable for through-hole mounting.
The operating temperature ranges from -55°C to +100°C.
Yes, the 4N37 is compliant with RoHS directive 2002/95/EC.