| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor 4N35TVM is a transistor output optocoupler designed for reliable signal isolation in electronic circuits. It offers a high isolation voltage of 7500Vrms, making it suitable for applications requiring robust electrical separation.
Key electrical specifications include a nominal forward current of 60mA, a forward voltage of 1.5V, and a reverse voltage rating of 6V. The device has a maximum power dissipation of 150mW and a maximum collector emitter voltage of 30V, with a low maximum collector emitter saturation voltage of 0.3V.
This optocoupler operates within a temperature range of -40C to +100C. It features a DC input type and an NPN phototransistor output device. The component is housed in a PDIP-6 package and is supplied in bulk packaging.
The 4N35TVM is part of the 4N35m series and is manufactured by ON Semiconductor. Its dimensions are 3.53mm in height, 8.89mm in length, and 6.6mm in width.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature is +100°C.
The 4N35TVM is available in a PDIP-6 package.
The isolation voltage is 7500 Vrms.
The forward current rating is 60 mA.
The maximum collector-emitter voltage is 30 V.
It uses an NPN phototransistor output.