| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,220 pcs
|
5220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor 4N35M is a 6-pin dual-in-line package (DIP) optocoupler. It consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. This component offers a high isolation voltage of 4170Vrms and a minimum current transfer ratio (CTR) of 100% at 10mA input current.
Key electrical characteristics include a maximum output current of 60mA, a Vce saturation voltage of 300mV, and typical turn-on and turn-off times of 2µs. The operating temperature range is from -40°C to 100°C.
This optocoupler is suitable for applications such as power supply regulators, digital logic inputs, and microprocessor inputs. It is mounted via through-hole technology.
The 4N35M is RoHS3 compliant and has an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 4N35M optocoupler has an isolation voltage of 4170Vrms.
The minimum current transfer ratio for the 4N35M is 100% at an input current of 10mA.
The 4N35M operates within a temperature range of -40°C to 100°C.
The 4N35M is supplied in a 6-DIP package.
The 4N35M is designed for through-hole mounting.