| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
177,000 pcs
|
177000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,640 pcs
|
12640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Power Dissipation | |
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| Tape & Reel | |
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The ON Semiconductor 4N25M is a general-purpose optocoupler designed for reliable signal isolation. It consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor.
This optocoupler offers a high isolation voltage of 4170Vrms, making it suitable for applications requiring robust electrical separation. It has a nominal forward current rating of 60mA and a minimum current transfer ratio of 20% at 10mA.
The 4N25M is packaged in a standard 6-pin DIP (Dual In-line Package) with a 0.300" lead spacing, designed for through-hole mounting. Its operating temperature range is -40°C to 100°C.
Key applications include power supply regulators, digital logic inputs, and microprocessor inputs where signal isolation is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 4N25M optocoupler has an isolation voltage of 4170Vrms.
The minimum current transfer ratio for the 4N25M is 20% at a forward current of 10mA and Vce of 10V.
The 4N25M operates within a temperature range of -40°C to 100°C.
The 4N25M is available in a 6-DIP package.