HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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757 pcs
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757 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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715 pcs
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715 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BC847W-QX is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of up to 45V and can handle a maximum collector current of 100mA.
This transistor is housed in a compact SOT-323 surface-mount package, making it ideal for space-constrained designs. The BC847W-QX operates within a junction temperature range of -40°C to 150°C and has a transition frequency of 100MHz.
Key electrical characteristics include a maximum saturation voltage of 400mV at 5mA base current and 100mA collector current, and a minimum DC current gain (hFE) of 110 at 2mA base current and 5V collector-emitter voltage. It also features a low collector cutoff current of 15nA.
The device is RoHS3 compliant and has an MSL rating of 1. Its surface-mount capability simplifies integration into printed circuit boards for automated assembly processes.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 3.5V to 45V. Under BIAS = VCC conditions, the range is 2.97V to 16V.
The maximum switching frequency is 2.2MHz. It is dynamically programmable from 100kHz to 2.2MHz.
The operating temperature range (TA) is –40°C to +125°C. The maximum junction temperature (TJ) is 150°C.
The maximum collector-emitter breakdown voltage is 45V.
The maximum collector current is 100 mA.
The typical transition frequency is 100MHz.
The package type is SOT-323.
