| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The 3SK324UG-TL-E is an N-Channel Dual Gate MOSFET from Renesas, designed for RF amplification and switching applications. This device features a drain-source voltage rating of 3.5V and a drain current of 10mA. With a gain of 24dB and a low noise figure of 1dB, it is suitable for low-noise amplifier stages in RF circuits.
The MOSFET is housed in a compact CMPAK-4 surface mount package, which is equivalent to SC-82A and SOT-343. The small footprint and surface mount design make it ideal for space-constrained applications. The dual gate configuration allows for flexible biasing and gain control.
The device employs MOSFET technology with an N-Channel dual gate configuration, providing high input impedance and low noise performance. The 24dB gain helps in amplifying weak RF signals without significant distortion. The 1dB noise figure ensures minimal signal degradation. This component is commonly used in RF front-end modules, wireless communication devices, and other high-frequency applications.
3.5 V.
10 mA.
24 dB.
1 dB.
SC-82A, SOT-343, with supplier device package CMPAK-4.
N-Channel Dual Gate.
It is listed as RoHS3 compliant, but this is unverified.