| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
97,730 pcs
|
97730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
404 pcs
|
404 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Gain | |
| Military Grade | |
| Mounting Type | |
| Noise Figure | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The Renesas 3SK318YB-TL-E is an N-Channel Dual Gate MOSFET designed for RF applications. It features a drain-source voltage rating of 3.5V and a drain current of 10mA.
The device provides a typical gain of 21dB and a typical noise figure of 1.4dB, making it suitable for low-noise amplifier stages.
It is offered in a surface mount SC-82A/SOT-343 package, with a supplier device package of CMPAK-4. The mounting type is surface mount.
The component is listed as RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited). Note that compliance data is unverified and should be confirmed with official documentation.
3.5V.
SC-82A, SOT-343, with supplier device package CMPAK-4.
It is listed as RoHS3 Compliant, but this is unverified.
21 dB.
1.4 dB typical.
Surface mount.