| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Noise Figure | |
| Operating Voltage | |
| SVHC Present | |
| Storage Temperature |
The Renesas 3SK318YB-TL is a silicon N-channel dual gate MOSFET specifically designed for UHF RF amplification applications. This component features a maximum drain-to-source voltage (VDS) of 6V and a maximum drain current (ID) of 20mA, with a channel power dissipation (Pch) of 100mW.
Key electrical characteristics include low noise performance, with a typical noise figure (NF) of 1.4 dB at 900 MHz, and excellent cross-modulation characteristics. The device is capable of low voltage operation, supporting a bias voltage (+B) of 5V.
Packaged in a DIP format, the 3SK318YB-TL is suitable for various RF circuit designs requiring amplification at UHF frequencies. Its dual-gate structure allows for flexible circuit configurations and improved performance in demanding RF environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 6V.
The maximum drain current (Id) is 20mA.
The typical noise figure is 1.4 dB at 900 MHz.
The nominal operating voltage (+B) is 5V.
The 3SK318YB-TL is available in a DIP package.
The maximum channel temperature is 150°C.