| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,301 pcs
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3301 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Renesas 3SK298ZP-TL-E is a silicon N-channel dual gate MOS FET optimized for UHF and VHF RF amplifier circuits. It is housed in a compact CMPAK-4 surface mount package (Renesas package code PTSP0004ZA-A) with four pins: Source, Gate1, Gate2, and Drain. The device is designed for low voltage operation and offers excellent RF performance.
Key electrical specifications include a maximum drain to source voltage of 12 V, maximum drain current of 25 mA, and channel power dissipation of 100 mW. The device features a low noise figure of 1.0 dB typical at 200 MHz and 3.2 dB typical at 900 MHz. Power gain is 25 dB typical at 200 MHz and 15 dB typical at 900 MHz. Input capacitance is 2.9 pF typical, output capacitance 1.0 pF typical, and reverse transfer capacitance 0.023 pF typical at 1 MHz.
The dual gate configuration allows for improved gain control and reduced feedback capacitance, making it suitable for AGC applications. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is sensitive to electrostatic discharge and requires appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 615+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12 V.
CMPAK-4 (Renesas package code PTSP0004ZA-A).
Channel temperature up to 150°C, storage temperature from -55 to +150°C.
Yes, it is RoHS3 compliant.
1.0 dB typical.
25 dB typical.