| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Gate Charge | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The 3N70 by ISSI is a specialized transistor used in high voltage and current applications. It features a drain-source breakdown voltage of 700V, making it suitable for power switching and high voltage circuits. The device has a gate threshold voltage typically at 2.0V, with a maximum of 4.0V, and a gate-source breakdown voltage of 0.6 V/°C. It offers a static drain-source on-state resistance of up to 4.0Ω at VGS = 10V. The transistor's gate charge is approximately 10 nC, and it can handle a continuous drain current of 3A, with a pulsed drain current of 12A. Its avalanche energy for single pulses reaches 200mJ, and it can withstand avalanche energy of 7.5mJ in repetitive conditions. The maximum gate-source voltage is ±30V, and the maximum gate-drain voltage is also ±30V. The device is suitable for power switching, high voltage regulation, and other applications requiring robust electrical characteristics. It is packaged for discrete mounting in power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the 3N70 is 700V.
The maximum continuous drain current for the 3N70 is 3.0A.
The gate threshold voltage of the 3N70 is typically 2.0V, with a maximum of 4.0V.
The maximum gate-source voltage for the 3N70 is ±30V.
