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3N211 The Texas Instruments 3N211 is a Dual Gate MOSFET VHF Amplifier. It offers a Drain Source Voltage up to 35V and a Drain Current up to 50mA.
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3N211

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments 3N211 is a Dual Gate MOSFET VHF Amplifier. It offers a Drain Source Voltage up to 35V and a Drain Current up to 50mA.
✓ Total Stock: 48 pcs
$ Price Range: $0.99

3N211 Available from 1 distributor

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3N211 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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3N211 Description

Short technical summary and product information.

The 3N211 from Texas Instruments is a Dual Gate MOSFET designed for VHF amplifier applications. This component is part of the Transistors - FETs, MOSFETs - Arrays category.

 

Key electrical characteristics include a maximum Drain Source Voltage of 35 Vdc and a maximum Drain Current of 50 mAdc. The device exhibits a minimum Forward Transfer Admittance of 15 mmhos and a maximum Reverse Transfer Capacitance of 0.05 pF. Noise Figure is specified as low as 3.5 dB at 200 MHz.

 

Maximum ratings include a Junction Temperature Range of -65 to +175 °C and a Storage Temperature Range of -65 to +175 °C. The device is available in an LSSOP package.

 

This MOSFET is suitable for various RF applications requiring amplification at VHF frequencies.

3N211 Quick Information

Product Type: Dual Gate MOSFET
Canonical Name: 3N211 Dual Gate MOSFET VHF Amplifier
Subcategory: Dual Gate

3N211 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

3N211 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

3N211 Features

  • Dual Gate MOSFET VHF Amplifier.
  • Maximum Drain Source Voltage 35 Vdc.
  • Maximum Drain Current 50 mAdc.
  • Noise Figure as low as 3.5 dB.
  • Available in LSSOP package.

3N211 Applications

  • Suitable for VHF RF amplification circuits.
  • Used in high-reliability dual-gate MOSFET applications.
  • Ideal for low-noise RF signal processing.
  • Applicable in communication and broadcasting equipment.
  • Suitable for VHF and UHF frequency range amplifiers.

3N211 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain Source Voltage for the 3N211?

The maximum Drain Source Voltage for the 3N211 is 35 Vdc.

What is the maximum Drain Current of the 3N211?

The maximum Drain Current for the 3N211 is 50 mAdc.

What is the minimum Forward Transfer Admittance of the 3N211?

The minimum Forward Transfer Admittance for the 3N211 is 15 mmhos.

What is the Noise Figure of the 3N211 at 200 MHz?

The Noise Figure of the 3N211 at 200 MHz is 3.5 dB.

What is the operating temperature range for the 3N211?

The operating temperature range for the 3N211 is -65 to +175 °C.

What package type is the 3N211 available in?

The 3N211 is available in an LSSOP package.

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