| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 3N201 from SP is an N-Channel Dual-Gate MOSFET specifically designed for VHF amplifier applications. This device features a maximum Drain-Source Voltage of 25V and a maximum Drain Current of 50mA.
Key electrical characteristics include a typical Gate 1-Source Cutoff Voltage of -1.5V and a Gate 2-Source Cutoff Voltage of -1.4V. The typical Zero-Gate-Voltage Drain Current is 13mA. For small-signal applications, it offers a typical Forward Transfer Admittance of 12.8 mmhos, an Input Capacitance of 3.3pF, and an Output Capacitance of 1.7pF.
This MOSFET is housed in a TO-72 package, making it suitable for various electronic circuits requiring amplification at VHF frequencies. Its dual-gate design allows for flexible control of amplification and impedance matching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 3N201 is 25 Vdc.
The maximum Drain Current for the 3N201 is 50 mA.
The typical Gate 1-Source Cutoff Voltage is -1.5 Vdc.
The typical Gate 2-Source Cutoff Voltage is -1.4 Vdc.
The typical Noise Figure at 200 MHz is 1.8 dB.
The 3N201 is supplied in a TO-72 package.