| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,557 pcs
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12557 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 3N187 is an N-channel JFET (Junction Field-Effect Transistor) from Harris Semiconductor. It is designed for general-purpose analog switching and amplification circuits. Key electrical specifications include a maximum drain-source voltage (Vds) of 20V and a typical drain current (Idss) of 5mA at Vds=15V. The device features a low input capacitance (Ciss) of 8.5pF maximum at 15V, making it suitable for high-frequency applications. The gate-source cutoff voltage (Vgs(off)) is 6.5V. Power dissipation is rated at 330mW, and the operating junction temperature range spans from -65°C to 175°C.
The 3N187 is housed in a through-hole TO-206AF / TO-72-4 Metal Can package, with the supplier device package designated as TO-72. This robust metal can package provides excellent thermal performance and reliability. The component is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
As a JFET, the 3N187 offers high input impedance and low noise, making it suitable for use in low-level signal processing, analog switches, and voltage-controlled resistors. Its wide operating temperature range allows use in harsh environments.
20V maximum.
TO-206AF, TO-72-4 Metal Can through hole.
-65°C to 175°C (junction).
RoHS3 compliant (unverified).
5mA typical at Vds=15V.
8.5pF maximum at Vds=15V.
330mW.