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3N163 P-Channel enhancement-mode MOSFET with -40V drain-source breakdown voltage, 50mA continuous drain current, and 250Ohm maximum on-resistance in a TO-72 package.
Mfr Part #:

3N163

Available from 1 distributors
Mfr Name: Vishay
Vishay
P-Channel enhancement-mode MOSFET with -40V drain-source breakdown voltage, 50mA continuous drain current, and 250Ohm maximum on-resistance in a TO-72 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $14.50

3N163 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

3N163 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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3N163 Description

Short technical summary and product information.

The 3N163 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale (originally Siliconix). It features a drain-source breakdown voltage of -40 V and a continuous drain current of -50 mA. The device exhibits a maximum on-resistance of 250 Ohm at Id = 100 µA and Vgs = 20 V. Gate-threshold voltage ranges from -2 to -5 V at Id = 10 µA.

 

This MOSFET offers ultra-low input leakage (0.02 pA typical), high gate breakdown voltage (±125 V), and low parasitic capacitances: maximum input capacitance of 3.5 pF at Vds = 15 V and maximum reverse transfer capacitance of 0.7 pF. Typical turn-on time is 18 ns. The device is normally off, providing high input impedance isolation.

 

The 3N163 is suitable for analog switching, digital switching, high input impedance amplifiers, and smoke detector applications. It is housed in a hermetic TO-206AF (TO-72) metal can package with through-hole mounting. Operating junction temperature range is -55°C to 150°C with maximum power dissipation of 375 mW.

3N163 Quick Information

Product Type: P-Channel MOSFET
Series: 3N163
Canonical Name: 3N163 P-Channel MOSFET, -40 V Drain-Source Breakdown, 50 mA Continuous Drain Current, TO-72
Subcategory: Single P-Channel MOSFET

3N163 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

3N163 Estimated Pricing

Qty Low High
200+ $14.50 $14.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

3N163 Features

  • P-Channel enhancement-mode MOSFET.
  • -40 V drain-source breakdown voltage.
  • 50 mA continuous drain current rating.
  • 250 Ohm maximum drain-source on-resistance.
  • Hermetic TO-72 through-hole package.

3N163 Applications

  • Analog switching and signal routing.
  • Digital switching and logic circuits.
  • High input impedance amplifier designs.
  • Smoke detector and electrometer circuits.
  • Low-power high-isolation switching.

3N163 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 3N163?

The drain-source breakdown voltage (V(BR)DSS) is -40 V (minimum).

What is the continuous drain current rating?

Continuous drain current is -50 mA.

What is the maximum on-resistance of the 3N163?

Maximum drain-source on-resistance is 250 Ohm at Id = 100 µA and Vgs = 20 V.

What package does the 3N163 come in?

The 3N163 is available in a TO-206AF (TO-72) metal can package with through-hole mounting.

What is the operating temperature range?

Operating junction temperature range is -55°C to 150°C.

What is the gate-threshold voltage of the 3N163?

Gate-threshold voltage (VGS(th)) is in the range of -2 to -5 V at Id = 10 µA. Maximum VGS(th) is 5 V.

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