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3LN01M-TL-E 3LN01M-TL-E is a 30V, 150mA N-Channel MOSFET from On Semiconductor. It features low on-resistance of 3.7Ω and is designed for general purpose switching applications.
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3LN01M-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
3LN01M-TL-E is a 30V, 150mA N-Channel MOSFET from On Semiconductor. It features low on-resistance of 3.7Ω and is designed for general purpose switching applications.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.12

3LN01M-TL-E Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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6,000 pcs
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6000 pcs On Request 1 On Request On Request On Request On Request On Request
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3LN01M-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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3LN01M-TL-E Description

Short technical summary and product information.

The 3LN01M-TL-E is a small signal N-Channel MOSFET from On Semiconductor, designed for general purpose switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 150mA at ambient temperature. The device offers a maximum on-resistance of 3.7Ω at 80mA and 4V gate drive, enabling efficient low-power switching.

 

With a gate threshold voltage of 1.3V max at 100µA, the MOSFET can be driven by low-voltage logic. It exhibits low input capacitance (7pF at 10V) and low gate charge (1.58nC at 10V), supporting ultrahigh speed switching. Maximum power dissipation is 150mW at ambient temperature, and the junction temperature can reach up to 150°C.

 

The device is housed in a surface mount SC-70/SOT-323 package, also known as MCP3, making it suitable for compact designs. It is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited). Typical applications include general purpose switching in portable electronics and signal switching circuits.

3LN01M-TL-E Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: 3LN01M-TL-E N-Channel MOSFET
Subcategory: Small Signal MOSFET

3LN01M-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

3LN01M-TL-E Estimated Pricing

Qty Low High
2,597+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

3LN01M-TL-E Features

  • 30V drain-source voltage rating.
  • 150mA continuous drain current.
  • Low on-resistance of 3.7Ω.
  • Ultrahigh speed switching capability.
  • Surface mount SC-70 package.

3LN01M-TL-E Applications

  • General purpose switching devices.
  • Low power switching applications.
  • Portable electronics.
  • Signal switching circuits.

3LN01M-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the continuous drain current?

150mA at ambient temperature.

What is the on-resistance?

3.7Ω maximum at 80mA and 4V gate drive.

What is the gate threshold voltage?

1.3V maximum at 100µA drain current.

What is the operating temperature range?

150°C junction temperature.

What package is it available in?

SC-70, SOT-323 (also known as MCP3).

Is it RoHS compliant?

RoHS3 compliant (unverified).

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