3LN01C-TB-H N-Channel enhancement mode MOSFET rated for 30V drain-source voltage and 150mA continuous drain current. Features low on-resistance of 3.7Ω at 4V gate drive.
Mfr Part #:

3LN01C-TB-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode MOSFET rated for 30V drain-source voltage and 150mA continuous drain current. Features low on-resistance of 3.7Ω at 4V gate drive.
✓ Total Stock: 725 pcs
$ Price Range: $0.12

3LN01C-TB-H Available from 1 distributor

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✓ Non-Authorised
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3LN01C-TB-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)

3LN01C-TB-H Description

Short technical summary and product information.

The 3LN01C-TB-H is an N-channel small signal enhancement mode MOSFET from On Semiconductor, designed for low-voltage, low-current switching applications. It features a maximum drain-source voltage of 30V and continuous drain current of 150mA, with pulsed current capability up to 600mA. The device offers low on-resistance: 3.7Ω maximum at 80mA and 4V gate drive, 5.2Ω at 40mA and 2.5V, and 12.8Ω at 10mA and 1.5V. Gate threshold voltage ranges from 0.4V to 1.3V, enabling operation with low gate drive voltages.

 

Switching performance is excellent with input capacitance of 7pF, total gate charge of 1.58nC, and typical turn-on/turn-off delay times of 19ns and 155ns respectively. The device is housed in a SC-59-3/CP3 surface mount package (equivalent to SOT-23), with gull-wing leads and tape and reel packaging. It is halogen-free and Pb-Free, meeting environmental compliance requirements for modern electronics. With a maximum power dissipation of 250mW, it is suitable for compact, low-power designs.

3LN01C-TB-H Quick Information

Product Type: MOSFET
Series: 3LN01C
Canonical Name: N-Channel MOSFET, 30V, 150mA, 3.7Ω, SC-59-3/CP3
Subcategory: Small Signal MOSFET

3LN01C-TB-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

3LN01C-TB-H Estimated Pricing

Qty Low High
2,597+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

3LN01C-TB-H Features

  • 30V drain-source breakdown voltage.
  • 150mA continuous drain current rating.
  • Low on-resistance: 3.7Ω at 4V gate drive.
  • Ultrahigh-speed switching with low gate charge.
  • Halogen-free and Pb-Free compliant.

3LN01C-TB-H Applications

  • Low-power load switching applications.
  • Battery-powered device power management.
  • Signal level shifting circuits.
  • DC-DC converter output switching.

3LN01C-TB-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 3LN01C-TB-H?

30V.

What is the maximum continuous drain current?

150mA DC, with a pulsed current rating of 600mA.

What is the on-resistance at different gate voltages?

3.7Ω max at VGS=4V and ID=80mA; 5.2Ω at VGS=2.5V and ID=40mA; 12.8Ω at VGS=1.5V and ID=10mA.

What is the package type of the 3LN01C-TB-H?

SC-59-3/CP3 (equivalent to SOT-23, TO-236-3).

What is the operating temperature range?

Channel temperature up to 150°C; storage temperature from -55°C to +150°C.

Is the 3LN01C-TB-H halogen-free?

Yes, it is halogen-free as confirmed by the datasheet ordering information.

Is the 3LN01C-TB-H RoHS compliant?

The device is listed as RoHS3 Compliant (unverified), and is confirmed Pb-Free and Halogen Free per the datasheet.

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