| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
88 pcs
|
88 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 30G124 is an Insulated Gate Bipolar Transistor (IGBT) with a breakdown voltage of 430V and a current rating of 200A at 25°C. It comes in a TO-220SIS package, suitable for through-hole mounting.
This IGBT is part of Toshiba's discrete IGBT offerings, known for high-voltage and high-current capabilities. It features fast switching and low collector-emitter saturation voltage, even in large current areas. The high input impedance allows for voltage drives.
Applications for the 30G124 include inverter and power conversion circuits. It is particularly noted for its use in plasma display panels (PDPs), as well as motor drivers, uninterruptible power supply (UPS) systems, and IH cookers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 430V at 25°C.
The IGBT current rating is 200A at 25°C.
The 30G124 IGBT is supplied in a TO-220SIS package.
Typical applications include plasma display panels, inverter circuits, and power conversion.