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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,090 pcs
|
1090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Package (Manufacturer) | |
| Package / Case (JEDEC Equivalent) | |
| Packing Type | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 30C02CH-TL-E is an NPN bipolar junction transistor from On Semiconductor designed for low-frequency amplification and high-speed switching applications. It offers a collector-emitter voltage (VCEO) of 30V and a continuous collector current rating of 700mA, with a pulse current capability of 1.4A.
Key electrical characteristics include a typical DC current gain (hFE) of 800 at 50mA and a gain-bandwidth product (fT) of 540MHz. The collector-emitter saturation voltage is typically 85mV at 200mA, enabling efficient low-voltage operation. The device is housed in a surface-mount CPH3 package, which is equivalent to SOT-23, SC-59, and TO-236 footprints.
The transistor is supplied in tape and reel packaging with 3,000 pieces per reel, suitable for automated assembly. It is rated for operation at junction temperatures up to 150°C and is marked as Pb-Free.
The maximum collector-emitter voltage (VCEO) is 30V.
The transistor is housed in a CPH3 surface mount package, which is equivalent to SOT-23, SC-59, and TO-236.
The junction temperature is rated up to 150°C, and the storage temperature range is -55 to +150°C.
The typical DC current gain (hFE) is 800 at IC=50mA and VCE=2V, with a minimum of 300.
The typical collector-emitter saturation voltage (VCE(sat)) is 85mV at IC=200mA and IB=10mA, with a maximum of 190mV.
The gain bandwidth product (fT) is typically 540MHz at VCE=10V and IC=50mA.
The datasheet states the device is Pb-Free, and the database lists it as RoHS3 Compliant, though this is unverified.