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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2STR2160 is a PNP bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications in surface-mount designs.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 60V, a continuous collector current (IC) rating of 1A, and a power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 180 at 500mA collector current and 2V VCE, with a maximum VCE saturation voltage of 480mV at 100mA base current and 1A collector current.
The transistor is housed in a SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59) and has a maximum junction operating temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.76 | $0.76 |
| 10+ | $0.47 | $0.47 |
| 100+ | $0.30 | $0.30 |
| 500+ | $0.23 | $0.23 |
| 1,000+ | $0.21 | $0.21 |
| 3,000+ | $0.18 | $0.18 |
| 6,000+ | $0.16 | $0.16 |
| 9,000+ | $0.15 | $0.15 |
| 15,000+ | $0.15 | $0.15 |
| 21,000+ | $0.14 | $0.14 |
| 30,000+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 60V.
The maximum continuous collector current (IC) is 1A.
The 2STR2160 is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.
The power dissipation (Pd) is 500mW.
The maximum junction operating temperature is 150°C.
The minimum DC current gain (hFE) is 180 at a test condition of Ic=500mA and Vce=2V.
The maximum VCE saturation voltage is 480mV at a test condition of Ib=100mA and Ic=1A.