2STR2160 The 2STR2160 is a PNP bipolar junction transistor from STMicroelectronics with a collector-emitter breakdown voltage of 60V and a collector current rating of 1A.
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2STR2160

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The 2STR2160 is a PNP bipolar junction transistor from STMicroelectronics with a collector-emitter breakdown voltage of 60V and a collector current rating of 1A.
Total Stock: 48,000 pcs
$ Price Range: $0.14 - $0.76

2STR2160 Available from 1 distributor

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2STR2160 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2STR2160 Description

Short technical summary and product information.

The 2STR2160 is a PNP bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications in surface-mount designs.

 

Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 60V, a continuous collector current (IC) rating of 1A, and a power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 180 at 500mA collector current and 2V VCE, with a maximum VCE saturation voltage of 480mV at 100mA base current and 1A collector current.

 

The transistor is housed in a SOT-23-3 surface-mount package (also known as TO-236-3 or SC-59) and has a maximum junction operating temperature of 150°C.

2STR2160 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2STR2160 PNP Bipolar Transistor
Subcategory: Single PNP

2STR2160 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2STR2160 Estimated Pricing

Qty Low High
1+ $0.76 $0.76
10+ $0.47 $0.47
100+ $0.30 $0.30
500+ $0.23 $0.23
1,000+ $0.21 $0.21
3,000+ $0.18 $0.18
6,000+ $0.16 $0.16
9,000+ $0.15 $0.15
15,000+ $0.15 $0.15
21,000+ $0.14 $0.14
30,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

2STR2160 Features

  • PNP bipolar junction transistor design.
  • Rated for 60V collector-emitter breakdown voltage.
  • Supports 1A continuous collector current.
  • Surface-mount SOT-23-3 package.
  • Maximum junction temperature of 150°C.

2STR2160 Applications

  • Suitable for general-purpose switching circuits.
  • Used in signal amplification stages.
  • Ideal for low-power load driving applications.

2STR2160 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2STR2160?

The collector-emitter breakdown voltage (VCEO) is 60V.

What is the maximum collector current for the 2STR2160?

The maximum continuous collector current (IC) is 1A.

What package does the 2STR2160 come in?

The 2STR2160 is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.

What is the power dissipation of the 2STR2160?

The power dissipation (Pd) is 500mW.

What is the operating temperature range for the 2STR2160?

The maximum junction operating temperature is 150°C.

What is the DC current gain (hFE) of the 2STR2160?

The minimum DC current gain (hFE) is 180 at a test condition of Ic=500mA and Vce=2V.

What is the saturation voltage of the 2STR2160?

The maximum VCE saturation voltage is 480mV at a test condition of Ib=100mA and Ic=1A.

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