2STR1160 The 2STR1160 is a low voltage fast-switching NPN power transistor from STMicroelectronics. It features a 60V collector-emitter breakdown voltage, 1A continuous collector current, and 500mW power dissipation in a miniature SOT-23-3 surface mount package.
Mfr Part #:

2STR1160

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The 2STR1160 is a low voltage fast-switching NPN power transistor from STMicroelectronics. It features a 60V collector-emitter breakdown voltage, 1A continuous collector current, and 500mW power dissipation in a miniature SOT-23-3 surface mount package.
✓ Total Stock: 32,000 pcs
$ Price Range: $0.08 - $0.48

2STR1160 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
24,000 pcs
24000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 21+ On Request On Request
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2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

2STR1160 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2STR1160 Description

Short technical summary and product information.

The 2STR1160 is an NPN power transistor manufactured by STMicroelectronics using their PB-HCD (Power Bipolar High Current Density) technology. This design delivers exceptional high gain performance coupled with very low collector-emitter saturation voltage, making it suitable for efficient power management in space-constrained applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 60V, a continuous collector current (IC) rating of 1A with a peak current (ICM) capability of 2A, and a maximum power dissipation of 500mW at 25°C ambient temperature. The device offers a high DC current gain (hFE) of 180 minimum at 500mA, with typical values reaching 250. Fast switching performance is characterized by a typical turn-on time of 220ns and turn-off time of 500ns under resistive load conditions.

 

The transistor is housed in a miniature SOT-23-3 surface mount package, also known as TO-236-3 or SC-59, and is supplied in tape and reel packaging for automated assembly. The complementary PNP device is the 2STR2160. Typical applications include LED drivers, battery chargers, motor and relay drivers, and voltage regulation circuits.

2STR1160 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: STMicroelectronics 2STR1160 NPN Low Voltage Fast-Switching Power Transistor
Subcategory: Low Voltage Fast-Switching

2STR1160 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected

2STR1160 Estimated Pricing

Qty Low High
1+ $0.48 $0.48
10+ $0.30 $0.30
100+ $0.19 $0.19
500+ $0.14 $0.14
1,000+ $0.12 $0.12
3,000+ $0.11 $0.11
6,000+ $0.10 $0.10
9,000+ $0.09 $0.09
15,000+ $0.08 $0.08
21,000+ $0.08 $0.08
30,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

2STR1160 Features

  • Low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23-3 surface mount package.
  • Complementary PNP type 2STR2160 available.

2STR1160 Applications

  • Ideal for LED driver circuits.
  • Used in battery charger applications.
  • Suitable for motor and relay drivers.
  • Employed in voltage regulation circuits.

2STR1160 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2STR1160?

The collector-emitter breakdown voltage (VCEO) is 60V minimum at IC=10mA.

What is the maximum continuous collector current rating?

The continuous collector current (IC) is rated at 1A nominal, with a peak current (ICM) of 2A for pulses less than 5ms.

What is the power dissipation of the 2STR1160?

The maximum power dissipation is 500mW at an ambient temperature of 25°C.

What package is the 2STR1160 available in?

The 2STR1160 is available in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C. The storage temperature range is -65°C to 150°C.

Is the 2STR1160 RoHS compliant?

The 2STR1160 is listed as RoHS3 Compliant, though this status is unverified.

What is the typical DC current gain (hFE) of the 2STR1160?

At IC=500mA and VCE=2V, the hFE is 180 minimum, 250 typical, and 560 maximum.

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