2STF2340 Low voltage fast-switching PNP power transistor. 40V collector-emitter voltage, 3A collector current, 1.4W power dissipation in SOT-89-3 surface mount package.
Mfr Part #:

2STF2340

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
Low voltage fast-switching PNP power transistor. 40V collector-emitter voltage, 3A collector current, 1.4W power dissipation in SOT-89-3 surface mount package.
Total Stock: 19,590 pcs

2STF2340 Available from 1 distributor

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19,590 pcs
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2STF2340 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Peak Current (ICM)
Collector-Emitter Saturation Voltage (Maximum @ IC = -2 A, IB = -100 mA)
Collector-Emitter Voltage (VCES)
Current
DC Current Gain (Minimum/Maximum @ IC = -0.1 A, VCE = -2 V)
DC Current Gain (Minimum/Maximum @ IC = -1 A, VCE = -2 V)
DC Current Gain (Minimum/Maximum @ IC = -3 A, VCE = -2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Ccbo)
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance (RthJA)
Transistor Type
Transition Frequency (fT)
Turn-Off Time (toff)
Turn-On Time (ton)
VBE Saturation @ IC=-2A, IB=-100mA
Vce Saturation (Max) @ Ib, Ic
Voltage

2STF2340 Description

Short technical summary and product information.

The 2STF2340 is a PNP power transistor from STMicroelectronics, manufactured using advanced PB-HDC (power bipolar high density current) technology. This process delivers exceptional high gain performance combined with very low collector-emitter saturation voltage, making it ideal for fast-switching applications.

 

Key electrical ratings include a maximum collector-emitter voltage (VCEO) of -40 V, a continuous collector current of -3 A, and a peak current capability of -6 A. Power dissipation is rated at 1.4 W at 25°C ambient temperature, with a maximum junction temperature of 150°C. The transistor offers high DC current gain (hFE) ranging from 100 to 450 at various test conditions, ensuring efficient current amplification.

 

The device is housed in a compact SOT-89-3 surface mount package (TO-243AA), which features a low thermal resistance of 89°C/W junction-to-ambient. Switching characteristics are optimized with typical turn-on time of 80 ns and turn-off time of 450 ns under resistive load conditions. These specifications make the 2STF2340 suitable for applications such as LED lighting, motherboard and hard disk drive circuits, mobile equipment, and DC-DC converters.

2STF2340 Quick Information

Product Type: Bipolar Junction Transistor (BJT), PNP, Single
Canonical Name: STMicroelectronics 2STF2340 Low Voltage Fast-Switching PNP Power Transistor
Subcategory: Low Voltage Fast-Switching Transistor

2STF2340 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2STF2340 Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • SOT-89-3 surface mount package.
  • RoHS compliant.

2STF2340 Applications

  • Ideal for LED lighting applications.
  • Used in motherboard and hard disk drive circuits.
  • Suitable for mobile equipment power management.
  • Designed for DC-DC converter circuits.

2STF2340 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the 2STF2340?

The 2STF2340 is available in the SOT-89-3 surface mount package (TO-243AA).

What is the maximum operating junction temperature?

The maximum junction temperature is 150 °C.

Is the 2STF2340 RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and should be treated as low confidence.

What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is -40 V.

What is the maximum collector current?

The continuous collector current rating is -3 A, with a peak current of -6 A (tP < 5 ms).

What is the power dissipation of the 2STF2340?

The maximum power dissipation is 1.4 W at 25 °C ambient temperature.

What is the DC current gain (hFE) at 1 A?

The DC current gain (hFE) at IC = -1 A, VCE = -2 V has a minimum of 180 and a maximum of 450.

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