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2ST5949 High power NPN bipolar transistor with 250V breakdown voltage and 17A collector current. Designed for audio power amplifier applications.
Mfr Part #:

2ST5949

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
High power NPN bipolar transistor with 250V breakdown voltage and 17A collector current. Designed for audio power amplifier applications.
✓ Total Stock: 2,568 pcs
$ Price Range: $1.88

2ST5949 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,568 pcs
On Request
2568 pcs On Request 1 On Request On Request On Request On Request On Request
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2ST5949 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2ST5949 Description

Short technical summary and product information.

The 2ST5949 is a high power NPN epitaxial planar bipolar transistor manufactured by STMicroelectronics using BiT-LA (Bipolar transistor for linear amplifier) technology. It offers a collector-emitter breakdown voltage of 250V minimum and a continuous collector current of 17A (34A peak). The device features a DC current gain (hFE) ranging from 80 to 160 at 1A/5V, with a minimum of 35 at 7A/5V. Typical transition frequency is 25 MHz. Collector-emitter saturation voltage is 3V maximum at 8A/800mA base current.

 

Designed primarily for audio power amplifier applications, the 2ST5949 is fully characterized at 125°C and has a maximum power dissipation of 250W at case temperature 25°C. The junction-to-case thermal resistance is 0.7°C/W. The transistor is complementary to the 2ST2121 PNP type.

 

The device is housed in a TO-3 (TO-204AA) package for chassis mounting and is supplied in tray packaging. It is RoHS3 compliant with lead-free second level interconnect (ECOPACK).

2ST5949 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2ST5949 High Power NPN Bipolar Transistor
Subcategory: Single NPN

2ST5949 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-free second level interconnect (ECOPACK)

2ST5949 Estimated Pricing

Qty Low High
400+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

2ST5949 Features

  • High breakdown voltage of 250V.
  • Continuous collector current of 17A.
  • Power dissipation up to 250W.
  • Complementary PNP transistor available.
  • RoHS3 compliant with lead-free interconnect.

2ST5949 Applications

  • Designed for audio power amplifiers.
  • Suitable for high-voltage switching circuits.
  • Used in linear amplifier stages.
  • Ideal for industrial power control.

2ST5949 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

Minimum 250V at IC=50mA.

What package is the 2ST5949 available in?

TO-3 (TO-204AA) for chassis mounting.

What is the maximum operating junction temperature?

150°C.

Is the 2ST5949 RoHS compliant?

Yes, RoHS3 compliant with lead-free second level interconnect (ECOPACK).

What is the DC current gain (hFE) of the 2ST5949?

Minimum 80 at 1A/5V, typical range 80-160, minimum 35 at 7A/5V.

What is the complementary PNP transistor for the 2ST5949?

The 2ST2121.

What is the power dissipation of the 2ST5949?

250W at case temperature 25°C.

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