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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2ST31A is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a minimum collector-emitter breakdown voltage of 60V, a maximum collector current of 3A, and a maximum power dissipation of 40W. The DC current gain (hFE) is at least 100 at Ic=20mA and Vce=4V, and the collector-emitter saturation voltage is typically 1.2V at Ib=375mA and Ic=3A.
The device is housed in a TO-220-3 package, which supports through-hole mounting and provides good thermal performance. The operating junction temperature can reach up to 150°C.
The 2ST31A is listed as RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). It is suitable for a variety of general-purpose circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.57 | $1.57 |
| 50+ | $0.74 | $0.74 |
| 100+ | $0.66 | $0.66 |
| 500+ | $0.52 | $0.52 |
| 1,000+ | $0.47 | $0.47 |
| 2,000+ | $0.43 | $0.43 |
| 5,000+ | $0.39 | $0.39 |
| 10,000+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 60V.
The 2ST31A is available in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.
The 2ST31A is listed as RoHS3 compliant.
The maximum collector current is 3A.
The maximum power dissipation is 40W.
The minimum DC current gain is 100 at Ic=20mA, Vce=4V.