CD54HCT20F3A
Texas Instruments
The Texas Instruments CD54HCT20F3A is a dual 4-input NAND gate. It operates from 4.5V to 5.5V and features a wide temperature range of -55°C to +125°C.
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK956 is an N-Channel MOSFET Transistor manufactured by Inchange Semiconductor. It is specifically designed for high voltage, high speed applications such as off-line switching power supplies, UPS, AC and DC motor controls, and relay and solenoid drivers.
Key electrical characteristics include a drain-source voltage (VDSS) of 800V (minimum), a continuous drain current (ID) of 9A at 25℃, and a total power dissipation (Ptot) of 150W at 25℃. The gate threshold voltage (VGS(TH)) ranges from 2.5V to 5.0V, with a typical value of 3.5V. The drain-source on-state resistance (RDS(ON)) is typically 1Ω at 10V VGS and 4A ID.
This MOSFET offers fast switching speeds with a typical turn-on time of 280ns and a turn-off time of 460ns under specified conditions. The operating junction temperature (Tj Max.) is 80℃, and the storage temperature range is -55℃ to 150℃.
The 2SK956 is suitable for applications requiring robust performance in demanding power management scenarios.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the 2SK956 is 800V.
The maximum drain current is 9A.
The gate-source voltage is ±30V.
The maximum junction temperature is 80°C.
The total dissipation is 150W at 25°C.
The typical drain-source on-resistance is 1Ω at VGS=10V and ID=4A.
