| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The 2SK955 is a RF MOSFET transistor designed for radio frequency applications. It features a drain-source resistance of at least 2Ω, which is suitable for high-frequency switching and amplification tasks. The device is mounted in a package suitable for RF circuit integration and is used in various RF signal processing circuits.
This transistor's electrical characteristics include a minimum drain-source resistance of 2Ω, contributing to its efficiency in RF switching applications. Its breakdown voltage specifications ensure reliable operation within specified voltage limits. The 2SK955 is suitable for use in RF amplifiers, transmitters, and other radio frequency electronic systems.
Manufactured by Fe, the device adheres to industry standards for RF MOSFETs, providing predictable performance in RF circuit designs. Proper heat sinking and circuit design considerations are recommended to optimize performance and longevity.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source resistance of the 2SK955 is at least 2Ω.