2SK932-23-TB-E N-Channel JFET from On Semiconductor. Features 15V Vds, 50mA Id, and 200mW power dissipation in a surface-mount SMCP package.
Mfr Part #:

2SK932-23-TB-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel JFET from On Semiconductor. Features 15V Vds, 50mA Id, and 200mW power dissipation in a surface-mount SMCP package.
✓ Total Stock: 68,865 pcs
$ Price Range: $0.08 - $0.70

2SK932-23-TB-E Available from 1 distributor

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✓ Non-Authorised
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68,865 pcs
68865 pcs On Request 1 On Request On Request On Request On Request On Request

2SK932-23-TB-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Drain (Id)
Drain to Source Voltage (Vdss)
FET Type
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage

2SK932-23-TB-E Description

Short technical summary and product information.

The 2SK932-23-TB-E is an N-Channel JFET manufactured by On Semiconductor, designed for RF amplification and low-noise applications. It utilizes the FBET process to achieve low noise figure and high forward transfer admittance. Key electrical specifications include a maximum drain-to-source voltage of 15 V, drain current of 50 mA, and power dissipation of 200 mW. The device features a zero-gate voltage drain current range of 10.0 to 24.0 mA and a cutoff voltage between -0.2 and -1.4 V. With a typical input capacitance of 10 pF and reverse transfer capacitance of 3 pF, it is suitable for high-frequency circuits. The JFET is offered in a surface-mount SMCP package, compatible with SC-59, SOT-23-3, and TO-236-3 footprints. It is supplied in tape and reel packaging with 3000 units per reel. The device is Pb-Free and RoHS compliant.

 

Typical applications include AM tuner RF amplification and low-noise amplifier stages. The low noise figure of 1.5 dB at 1 kHz makes it ideal for sensitive signal processing. The device is rated for junction temperatures up to 150°C and storage from -55°C to 150°C.

2SK932-23-TB-E Quick Information

Product Type: N-Channel JFET
Canonical Name: 2SK932-23-TB-E N-Channel JFET
Subcategory: N-Channel JFET

2SK932-23-TB-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SK932-23-TB-E Estimated Pricing

Qty Low High
1+ $0.70 $0.70
10+ $0.43 $0.43
50+ $0.32 $0.32
100+ $0.28 $0.28
500+ $0.21 $0.21
3,000+ $0.15 $0.15
6,000+ $0.13 $0.13
9,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK932-23-TB-E Features

  • Low noise figure of 1.5 dB typical.
  • High forward transfer admittance (50 mS typical).
  • Wide IDSS range of 10 to 24 mA.
  • Surface-mount SMCP package for compact designs.
  • Pb-Free and RoHS compliant.

2SK932-23-TB-E Applications

  • Ideal for AM tuner RF amplification stages.
  • Used in low-noise amplifier circuits.
  • Suitable for high-frequency signal processing.

2SK932-23-TB-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2SK932-23-TB-E?

15 V.

What is the operating temperature range?

Maximum junction temperature is 150°C, storage temperature range -55 to +150°C.

What is the package type?

Surface-mount SMCP package, compatible with SC-59, SOT-23-3, and TO-236-3.

Is the device RoHS compliant?

The datasheet states it is Pb-Free, and the RoHS status is listed as RoHS3 compliant (unverified).

What is the typical noise figure?

1.5 dB at 1 kHz.

What is the input capacitance?

10 pF typical.

What are the available IDSS ranks?

Rank 23: 10.0 to 17.0 mA; Rank 24: 14.5 to 24.0 mA.

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