| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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216 pcs
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216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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196 pcs
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196 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Manufacturer Name |
The 2SK899 is an N-Channel MOSFET transistor manufactured by Fujitsu Semiconductor. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a Drain-Source Voltage (VDSS) of 500V, a continuous Drain Current (ID) of 18A at 25℃, and a Pulsed Drain Current (ID(puls)) of 72A. The device features a maximum power dissipation (Ptot) of 125W at 25℃ and a maximum operating junction temperature (Tj) of 150℃. The thermal resistance from junction to case (Rthj-c) is 1.0℃/W.
Electrical characteristics include a Gate Threshold Voltage (VGS(TH)) typically between 2.1V and 4.0V, and a Drain-Source On-state Resistance (RDS(ON)) of 0.28Ω to 0.33Ω at VGS=10V and ID=8A. The transistor exhibits fast switching speeds with a typical turn-on time (ton) of 130ns and a turn-off time (toff) of 330ns.
This MOSFET is suitable for various power applications such as switching regulators, UPS systems, DC-DC converters, and general-purpose power amplifiers. It has 3 terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the 2SK899 is 18A at 25℃.
The Drain-Source Voltage (VDSS) of the 2SK899 is 500V minimum.
The maximum power dissipation (Ptot) for the 2SK899 is 125W at 25℃.
The typical Gate Threshold Voltage (VGS(TH)) for the 2SK899 is 2.1V.
The typical Drain-Source On-stage Resistance (RDS(ON)) for the 2SK899 is 0.28Ω.
The 2SK899 is used in switching regulators, UPS, DC-DC converters, and general-purpose power amplifiers.