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2SK880GRTE85LF N-Channel JFET from Toshiba, rated for 50V drain-source voltage and 100mW power dissipation. Ideal for low-noise audio frequency amplifier applications.
Mfr Part #:

2SK880GRTE85LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
N-Channel JFET from Toshiba, rated for 50V drain-source voltage and 100mW power dissipation. Ideal for low-noise audio frequency amplifier applications.
✓ Total Stock: 132,941 pcs
$ Price Range: $0.19 - $0.91

2SK880GRTE85LF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
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132,941 pcs
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132941 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2SK880GRTE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Voltage
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2SK880GRTE85LF Description

Short technical summary and product information.

The Toshiba 2SK880GRTE85LF is an N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of 15 mS typical and a low noise figure of 1 dB typical at 1 kHz.

 

Key electrical specifications include a maximum drain-source voltage of 50 V, drain current range of 2.6 to 6.5 mA (GR classification), and gate-source cutoff voltage of -0.2 V to -1.5 V. Input capacitance is 13 pF typical and reverse transfer capacitance is 3 pF typical.

 

The device is housed in a surface mount SC-70 (SOT-323) package and supports an operating temperature range of -55°C to 125°C. Maximum power dissipation is 100 mW.

2SK880GRTE85LF Quick Information

Product Type: JFET
Canonical Name: Toshiba 2SK880GRTE85LF N-Channel JFET
Subcategory: JFETs

2SK880GRTE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: REACH Unaffected

2SK880GRTE85LF Estimated Pricing

Qty Low High
1+ $0.91 $0.91
10+ $0.57 $0.57
50+ $0.42 $0.42
100+ $0.37 $0.37
500+ $0.28 $0.28
3,000+ $0.22 $0.22
9,000+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK880GRTE85LF Features

  • High forward transfer admittance of 15 mS.
  • Low noise figure of 1 dB at 1 kHz.
  • Surface mount SC-70 package.
  • Rated for 50V drain-source voltage.
  • Operating temperature range -55 to 125°C.

2SK880GRTE85LF Applications

  • Audio frequency low noise amplifier circuits.
  • High impedance input stages.
  • Signal switching applications.
  • Low-level sensor interfaces.

2SK880GRTE85LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

50 V.

What package is this JFET available in?

SC-70 (SOT-323).

What is the operating temperature range?

-55°C to 125°C.

Is this component RoHS compliant?

RoHS3 Compliant (unverified).

What is the typical noise figure?

1 dB at 1 kHz.

What is the forward transfer admittance?

15 mS typical.

What is the gate-source cutoff voltage range?

-0.2 V to -1.5 V.

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