| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK875 from NEC is an N-Channel MOSFET designed for electronic applications requiring specific voltage and resistance characteristics. This component offers a minimum breakdown voltage of 450V, making it suitable for circuits operating at higher voltage levels.
With a minimum drain-source resistance of 600mΩ, the 2SK875 provides a defined level of conductivity. The MOSFET has three terminals, a standard configuration for single-transistor components. Its N-Channel enhancement mode operation is typical for many switching and amplification tasks.
While detailed specifications like continuous drain current, power dissipation, and operating temperature are not provided in the available data, the known parameters suggest its use in power switching or signal control applications where its breakdown voltage and on-resistance are critical design factors. Further information would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK875 is 450V.
The minimum drain-source resistance is 600mΩ.
The 2SK875 has 3 terminals.