| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The 2SK817 is an N-Channel MOSFET transistor from NEC, designed for general-purpose applications. It offers a breakdown voltage of 60V and a maximum power dissipation of 2W. The device operates reliably up to a maximum temperature of 150°C.
This transistor is suitable for various electronic circuits requiring efficient switching or amplification. Its specifications indicate a minimum drain-source resistance of 80mΩ. The product is presented with 3 terminals.
Note: The information provided is a guide for product applications. The products are not designed for use in equipment requiring specialized quality and/or reliability, or in applications in hazardous environments, the aerospace industry, or the medical field.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK817 is 60V.
The maximum operating temperature for the 2SK817 is 150°C.
The maximum power dissipation for the 2SK817 is 2W.
The minimum drain-source resistance of the 2SK817 is 80mΩ.
The 2SK817 has 3 terminals.