| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SK791 is an N-Channel Enhancement MOSFET designed for high-voltage switching applications. It features a drain-source voltage (V(BR)DSS) of 850V, a continuous drain current of 3A, and a maximum power dissipation of 100W. The device is housed in a TO-220AB package suitable for through-hole mounting. Its high breakdown voltage makes it suitable for power supply, motor control, and high-voltage switching circuits. The device complies with RoHS3 standards and is unaffected by REACH regulations. Its low gate leakage current and fast switching times make it appropriate for high-speed switching applications in industrial automation and power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V(BR)DSS) of the 2SK791 is 850V.
The 2SK791 is packaged in a TO-220AB package.
The maximum continuous drain current (ID) is 3A.
The maximum power dissipation is 100W.
The maximum gate-source voltage (V(BR)GSS) is 20V.
Yes, the 2SK791 is RoHS3 compliant.