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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK790 is an N-Channel MOSFET Transistor engineered for demanding high voltage and high speed power switching applications. This component is suitable for use in switching regulators, converters, and solenoid or relay drivers.
Key electrical characteristics include a Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 15A at 25℃. The device offers a maximum power dissipation (Ptot) of 150W at 25℃. Its thermal resistance from junction to case (Rth j-c) is a low 1.0℃/W, facilitating efficient heat management.
The 2SK790 exhibits fast switching speeds with a typical rise time of 70ns, turn-on time of 100ns, fall time of 75ns, and turn-off time of 350ns. The Gate Threshold Voltage (VGS(th)) ranges from 2.0V to 4.0V, and the Drain-Source On-resistance (RDS(on)) is 0.40Ω at 7A and 10V gate drive.
Designed for robust performance, the 2SK790 operates within a junction temperature range of 150℃ and a storage temperature range of -55℃ to 150℃. Its specifications make it a reliable choice for power conversion and control circuits requiring efficient and rapid switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the 2SK790 is 15A at 25℃.
The Drain-Source Voltage (VDSS) of the 2SK790 is a minimum of 500V.
The maximum power dissipation (Ptot) for the 2SK790 is 150W at 25℃.
The Gate Threshold Voltage (VGS(th)) for the 2SK790 ranges from 2.0V to 4.0V.
The 2SK790 has a typical rise time of 70-140ns, turn-on time of 100-200ns, fall time of 75-150ns, and turn-off time of 350-700ns.
The thermal resistance from junction to case (Rth j-c) for the 2SK790 is 1.0℃/W.