| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature |
The Toshiba 2SK644 is an N-Channel Enhancement Mode MOSFET. It offers a high drain-source breakdown voltage of 500V and a gate-source breakdown voltage of 20.0V.
Key electrical characteristics include a maximum continuous drain current of 10.0A and a pulsed drain current of 30.0A. The device exhibits a maximum on-resistance of 1.0 Ohm and a maximum forward transconductance of 6.0S. Input capacitance is specified at a maximum of 1.8nF.
This MOSFET operates at a frequency of 1.0MHz under test conditions of ID=5.0A and VDS=10.0V at 25°C. The absolute maximum power dissipation is rated at 125W at TC=25°C.
The 2SK644 comes in a TO-247AA package, suitable for through-hole mounting. It is specified with a RoHS3 compliant status and Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (V(BR)DSS) is 500V.
The absolute maximum continuous drain current (I(D)) is 10.0A.
The maximum on-resistance (r(DS)on) is 1.0 Ohm.
The 2SK644 is available in a TO-247AA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.