| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK643 from Toshiba is an N-Channel MOSFET designed for general electronic applications. It offers a maximum Drain-Source Voltage of 600V, making it suitable for power switching and amplification circuits.
This MOSFET is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard handling and assembly processes. The product is not designed for applications requiring specialized quality and reliability, or those in hazardous environments, the aerospace industry, or the medical field.
Further specifications such as on-resistance, continuous drain current, and power dissipation are not detailed in the available information but would typically be found in a comprehensive datasheet. The component falls under the category of Transistors - FETs, MOSFETs - Arrays.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK643 MOSFET is 600V.
The 2SK643 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SK643 is 1 Unlimited.
The REACH status for the 2SK643 is Unaffected.