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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK572 is an N-Channel Enhancement MOSFET, suitable for a wide range of electronic applications. This component boasts a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 15A under specified test conditions.
Key electrical characteristics include a gate-source threshold voltage (Vgs(th)) ranging from 1.5V to 3.5V, a maximum on-resistance (Rds(on)) of 0.18 Ohms, and a maximum power dissipation of 100W. The MOSFET also exhibits specific capacitance and switching times, with a maximum input capacitance (Ciss) of 1.5nF, a maximum rise time (tr) of 220ns, and a maximum fall time (tf) of 200ns.
Packaged in a TO-247AA through-hole configuration, the 2SK572 is designed for reliable integration into electronic circuits. Its specifications make it a versatile choice for power management and switching applications where performance and durability are critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2SK572 MOSFET is 150V.
The continuous drain current (Id) for the 2SK572 is 15A.
The 2SK572 MOSFET is supplied in a TO-247AA package.
The absolute maximum power dissipation for the 2SK572 is 100W.
The gate-source threshold voltage (Vgs(th)) for the 2SK572 ranges from a minimum of 1.5V to a maximum of 3.5V.
