| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,116,000 pcs
|
1116000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Drain (Id) | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Voltage |
The 2SK545-11D-TB-E is an N-Channel JFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current of 1 mA. The device has a gate-source cutoff voltage of 1.5 V at I_D = 1 µA and a drain-source saturation current of 60 µA at V_DS = 10 V, V_GS = 0 V.
With a maximum input capacitance of 1.7 pF at V_DS = 10 V, this JFET is suitable for low-signal switching and amplification applications. The power dissipation is rated at 125 mW.
The component is offered in a surface-mount package compatible with TO-236-3, SC-59, and SOT-23-3 footprints, with a supplier device package designation of SMCP. It is designed for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 9,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SK545-11D-TB-E is offered in a surface-mount package compatible with TO-236-3, SC-59, and SOT-23-3, with a supplier device package of SMCP.
The part is listed as RoHS3 Compliant, but this compliance data is unverified and should be confirmed with the manufacturer.
The drain to source voltage (Vdss) is 40 V.
The continuous drain current is 1 mA.
The power dissipation is 125 mW.