| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SK538 is an N-Channel Enhancement MOSFET produced by Toshiba, designed for high-voltage switching applications. It has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 20V, with a maximum drain current (ID) of 3A. The device features a maximum power dissipation of 100W and a Rds(on) of 4.5Ω, making it suitable for power switching circuits. The package type is TO-247AA, which supports through-hole mounting. It complies with RoHS3 standards, REACH unaffected, and has a moisture sensitivity level of 1. This component is used in power supplies, motor controls, and high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 900V.
It comes in a TO-247AA package.
Yes, it is RoHS3 compliant.
The maximum drain current (ID) is 3A.
The maximum gate-source voltage (VGS) is 20V.