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2SK537 The Toshiba 2SK537 is an N-channel MOSFET with a breakdown voltage of 900V and a maximum power dissipation of 60W. It has a minimum drain-source resistance of 9Ω.
Mfr Part #:

2SK537

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SK537 is an N-channel MOSFET with a breakdown voltage of 900V and a maximum power dissipation of 60W. It has a minimum drain-source resistance of 9Ω.
✓ Total Stock: 68 pcs
$ Price Range: $0.99

2SK537 Available from 1 distributor

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2SK537 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Power Dissipation
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2SK537 Description

Short technical summary and product information.

The Toshiba 2SK537 is an N-channel MOSFET designed for power switching applications. It offers a high breakdown voltage of 900V, making it suitable for high-voltage circuits. The device features a maximum power dissipation of 60W and a minimum drain-source resistance of 9Ω.

 

With 3 terminals, this MOSFET is designed for general-purpose use in power electronics. Its specifications suggest suitability for applications requiring robust voltage handling and moderate power levels. The component is manufactured by Toshiba, a well-known name in semiconductor technology.

 

Further details regarding specific operating conditions, package type, and mounting options would typically be found in the manufacturer's datasheet. However, based on the available information, the 2SK537 presents a reliable option for designers needing a high-voltage MOSFET.

2SK537 Quick Information

Product Type: MOSFET
Canonical Name: Toshiba 2SK537 N-Channel MOSFET
Subcategory: N-Channel

2SK537 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SK537 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SK537 Features

  • 900V minimum breakdown voltage.
  • 60W maximum power dissipation.
  • 9Ω minimum drain-source resistance.
  • 3-terminal configuration.

2SK537 Applications

  • Suitable for high-voltage power switching applications.
  • Used in high-power amplifier circuits.
  • Ideal for industrial motor control systems.
  • Applicable in voltage regulation and power supply modules.

2SK537 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the 2SK537 MOSFET?

The minimum breakdown voltage for the 2SK537 MOSFET is 900V.

What is the maximum power dissipation for the 2SK537?

The maximum power dissipation for the 2SK537 is 60W.

What is the minimum drain-source resistance of the 2SK537?

The minimum drain-source resistance of the 2SK537 is 9Ω.

How many terminals does the 2SK537 have?

The 2SK537 has 3 terminals.

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