| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SK532 is an N-Channel Enhancement MOSFET manufactured by Toshiba. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 12 A. The device is RoHS3 compliant and has a moisture sensitivity level of 1, indicating unlimited reflow cycles. Its package type is TO-220var, suitable for through-hole mounting. This MOSFET is used in switching applications, power management, and motor control circuits. Its low on-resistance and high current capacity make it suitable for high-efficiency power switching designs. The device's maximum power dissipation is 2 W, and it exhibits fast switching times with fall and rise times of 220 ns and 200 ns respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) of the 2SK532 is 60 V.
The continuous drain current (ID) of the 2SK532 is 12 A.
Yes, the 2SK532 is RoHS3 compliant.
The 2SK532 is packaged in a TO-220var package.
The fall time is 220 ns and the rise time is 200 ns.