| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The Toshiba 2SK526 is an N-Channel MOSFET designed for electronic applications requiring robust performance. This component boasts a minimum breakdown voltage of 250V and a maximum power dissipation of 40W, making it suitable for power switching and amplification tasks.
With 3 terminals, the 2SK526 facilitates integration into various circuit designs. Its Drain-Source On-Resistance is specified at 600mΩ minimum. While specific operating voltage and continuous drain current are not detailed here, its specifications suggest utility in moderate power applications.
This MOSFET is part of the broader category of Transistors - FETs, MOSFETs - Arrays. Its construction and electrical characteristics are typical for N-Channel MOSFETs used in general-purpose switching and control circuits. Further details on specific applications and optimal operating conditions would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK526 is 250V.
The maximum power dissipation for the 2SK526 is 40W.
The minimum drain-source on-resistance is 600mΩ.
The 2SK526 has 3 terminals.