| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The 2SK4124 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications requiring a drain-to-source voltage (Vdss) of 500V and a continuous drain current of 20A. The device features a maximum drain-source on-resistance of 430mOhm at 8A and 10V gate drive, ensuring efficient power handling.
This MOSFET offers a maximum gate charge of 46.6nC at 10V and an input capacitance of 1200pF at 30V, contributing to moderate switching performance. The gate-source voltage is rated up to ±30V. Power dissipation is rated at 2.5W at ambient temperature and up to 170W at case temperature, with a maximum junction temperature of 150°C.
The 2SK4124 is housed in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package designated as TO-3PB. This package is suitable for designs requiring robust mechanical mounting and effective heat sinking.
| Qty | Low | High |
|---|---|---|
| 100+ | $4.08 | $4.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 500V.
The continuous drain current is 20A at ambient temperature.
The maximum drain-source on-resistance is 430mOhm at 8A drain current and 10V gate-source voltage.
The 2SK4124 is available in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package designated as TO-3PB.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.