| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SK4108 is a Silicon N-Channel MOSFET, identified as a π-MOS VI type. It is specifically engineered for applications such as switching regulators.
Key electrical characteristics include a low drain-source ON resistance of 0.21Ω (typ.) and a high forward transfer admittance of 14 S (typ.). The device offers a low leakage current of 100 μA (max) at 500V VDS. The gate threshold voltage ranges from 2.0V to 4.0V.
Absolute maximum ratings specify a drain-source voltage (VDSS) of 500V and a continuous drain current (ID) of 20A at 25°C. The device can handle a pulse drain current (IDP) of 80A and has a maximum power dissipation (PD) of 150W at 25°C.
Thermal characteristics include a channel-to-case thermal resistance (Rth(ch-c)) of 0.833 °C/W and a channel-to-ambient thermal resistance (Rth(ch-a)) of 50 °C/W. The component operates within a channel temperature range of -55°C to 150°C.
The 2SK4108 is housed in a 2-16C1B package and is an electrostatic-sensitive device, requiring careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDSS) for the 2SK4108 is 500 V.
The typical Drain-Source ON Resistance (R DS (ON)) for the 2SK4108 is 0.21 Ω at VGS = 10 V and ID = 10 A.
The typical Forward Transfer Admittance (|Y fs|) for the 2SK4108 is 14 S.
The operating temperature range (Tch) for the 2SK4108 is 150 °C.
The package type for the 2SK4108 is 2-16C1B.