| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,797 pcs
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7797 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The 2SK4098LS from Sanyo Denki is an N-Channel Silicon MOSFET designed for general-purpose switching applications. This device offers a high Drain-to-Source Breakdown Voltage of 600V and a typical forward transfer admittance of 2.1S. The static drain-to-source on-state resistance is a maximum of 1.1Ω at 3.5A and 10V.
Key electrical characteristics include input capacitance (Ciss) of 600pF, output capacitance (Coss) of 120pF, and reverse transfer capacitance (Crss) of 25pF, all measured at 30V and 1MHz. Switching times are also specified, with turn-on delay at 17ns, rise time at 34ns, turn-off delay at 80ns, and fall time at 30ns.
Total gate charge (Qg) is 23.5nC, gate-to-source charge (Qgs) is 4.5nC, and gate-to-drain charge (Qgd) is 13.5nC under specific test conditions. The integrated diode exhibits a typical forward voltage (VSD) of 1.2V at 7A.
The component is housed in a TO-220FI(LS) package with a lead spacing of 2.55mm, suitable for through-hole mounting. This MOSFET is suitable for various switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage is 600V.
The maximum Static Drain-to-Source On-State Resistance is 1.1Ω.
Typical switching times include 17ns for turn-on delay, 34ns for rise time, 80ns for turn-off delay, and 30ns for fall time.
The 2SK4098LS is supplied in a TO-220FI(LS) package.