| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The 2SK4094-1E is an N-Channel Power MOSFET manufactured by On Semiconductor. It is rated for a drain-source voltage of 60V and a continuous drain current of 100A, with a pulse drain current capability of 400A. The device features a low on-resistance of 5mOhm maximum at 10V gate drive, and 7mOhm maximum at 4V drive, enabling efficient operation in low-voltage logic circuits.
Electrical characteristics include a typical input capacitance of 12500pF, total gate charge of 220nC, and fast switching speeds with rise and fall times of 630ns and 750ns respectively. The avalanche energy rating is 850mJ, indicating robustness for inductive switching applications. The junction temperature range is -55°C to 150°C.
The MOSFET is housed in a TO-220-3 through-hole package with a lead spacing of 2.54mm. It is supplied in magazines of 50 pieces. The device is Pb-free and RoHS compliant (unverified).
The drain-source voltage rating is 60V.
The continuous drain current is 100A at Ta=25°C.
The package is TO-220-3 (through-hole).
The maximum junction temperature is 150°C, and storage temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant, but this is unverified. The datasheet indicates Pb-free composition.
The maximum on-resistance is 5mOhm at VGS=10V, ID=50A.
The gate threshold voltage (cutoff voltage) ranges from 1.2V to 2.6V.